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Details of Grant 

EPSRC Reference: GR/N04119/01
Title: OPTIMISATION OF MULTIPLE QUANTUM BARRIER REFLECTORS AND APPLICATION TO 630NM LASER DIODES
Principal Investigator: Wilks, Professor S
Other Investigators:
Mawby, Professor P Williams, Professor R
Researcher Co-Investigators:
Project Partners:
Department: Electrical & Electronic Engineering
Organisation: Swansea University
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 2000 Ends: 30 April 2003 Value (£): 205,683
EPSRC Research Topic Classifications:
Materials Synthesis & Growth Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Red-emitting AlGaInP quantum well laser diodes have a wide range of applications spanning both professional and consumer markets. At the present time the shortest wavelength of most commercial devices is 635nm, in practice 640nm, and is limited to low power. However, shorter wavelength lasers are required, particularly for data storage, and in the treatment of cancer using the 630nm-adsorption band in PDT drugs. The chief factor impending the manufacture of acceptable 630nm lasers is the thermally -activated loss of electrons from the active region of the device, limiting power out put and operating life. The use of multi-quantium barrier (MQB) reflectors, placed close to the active region in the laser, remains the only method devised to circumvent the problems of electron leakage based on current technology. However, this technique is far from optimised for AlGaInP based devices and required an in-depth investigation. Therefore, this multidisciplinary project combines the expertise of Swansea and Cardiff in the areas of MQB design, STM/STS studies of laser facets, device fabrication, characterisation and simulation in a novel approach to produce manufacturable and acceptable 630nm lasers. The programme is supported by EPI Ltd, PRP Opto and DIOMED.
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Organisation Website: http://www.swan.ac.uk