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EPSRC Reference: GR/N01095/01
Title: SYNTHESIS AND CHARACTERISATION OF HEXAGONAL BATI03- BASED MATERIALS
Principal Investigator: Sinclair, Professor D
Other Investigators:
Reaney, Professor IM
Researcher Co-Investigators:
Project Partners:
Department: Materials Science and Engineering
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 2000 Ends: 31 January 2003 Value (£): 164,336
EPSRC Research Topic Classifications:
Chemical Structure Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
Very little is known about the hexagonal polymorphy of BaTi03 (h-BaTi03). Recently we have successfully stabilised h-BaTi03-based materials by two methods. Firstly, by partial replacement of Ti by Ga ions to form dielectric h-Ba(Til-yGay)03-y/2 materials and, secondly by partial reduction of Ti(+IV) to Ti(+III) ions to form semiconductin gh-BaTi03-x/2 materials. Preliminary electrical characterisation shows the Ga-doped materials to have high room temperature permittivity values of ca. 50-70 making them potentially useful microwave dielectrics. In contrast, h-BaTi03-x/2 materials are semiconducting and exhibit interesting electronic phase transitions below 300K. on the basis of these preliminary results, we propose to undertake a systematic study of the structure-electrical property relationships in undoped and doped h-BaTi03-based materials. Funding is requested for two studentships. One student will concentrate on the preparation and characterisation of stoichiometric h-BaTi03 and Al, Ga, In, Sc Mg and Zn-doped materials whereas the second student will concentreate on semiconducting h-BaTi03-x/2 and Mn, Fe, Co and Ni-doped materials. All samples will be prepared by the mixed oxide route and the crystal chemistry and phase purity determined by a combination of X-ray, Neutron and Electron Diffraction, and Analytical Electron Microscopy. Electrical characterisation will include acIS, microwave bridge measurements and 4-terminal dc conductivity measurements.
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Organisation Website: http://www.shef.ac.uk