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Details of Grant 

EPSRC Reference: GR/M90832/01
Title: LOW TEMPERATURE, STABLE AMORPHOUS SILICON FOR THIN FILM TRANSISTORS ON PLASTIC
Principal Investigator: Robertson, Professor J
Other Investigators:
Milne, Professor WI
Researcher Co-Investigators:
Project Partners:
Philips
Department: Engineering
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 2000 Ends: 30 June 2003 Value (£): 176,616
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Active matrix liquid crystal displays (AMLCDs) using amorphous silicon thin film transistors (TFT) are the dominant flat panel display technology. There is a strong desire to lower the process temperature from the present 250-300C to below 150C to allow the use of plastic substrates. At present, hydrogenated amorphous silicon (a-Si:H) deposited at low temperature has either a low mobility or poor stability. It has recently been found that excess hydrogen in low temperature a-Si:H causes the wide band tails and thus the reduced field effect mobility, and that their instability arises from compressive stress. A plasma source with a high flux of low energy ions, such as an electron cyclotron resonance (ECR) reasctor, could dehydrogeneation the a-Si:H without introducing compressive stress. This project will use our ECR system to optimise the growth conditions for low temperature a-Si:H, and the results transferred to industrial collaborators such as Phillips. The results will be used to further our understanding of growth processes of a-Si:H.
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Organisation Website: http://www.cam.ac.uk