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Details of Grant 

EPSRC Reference: GR/M90658/01
Title: SMART CUT SILLICON ON SILLICIDE ON INSULATOR
Principal Investigator: Gamble, Professor H
Other Investigators:
McNeill, Dr D Armstrong, Dr B M McNeill, Dr D
Researcher Co-Investigators:
Project Partners:
Department: Sch of Electronics, Elec Eng & Comp Sci
Organisation: Queen's University of Belfast
Scheme: Standard Research (Pre-FEC)
Starts: 20 March 2000 Ends: 19 March 2001 Value (£): 45,522
EPSRC Research Topic Classifications:
System on Chip
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
Bipolar transistor performance has been enhanced by the use of silicon on insulator substrates (SOI). This is achieved mainly by reduction of the parasitic collector to substrate capacitance. A further improvement in the performance can be obtained through the use of a buried tungsten silicide layer to reduce collector series resistance. Still greater performance advances are set to be made by exploiting the fast diffusion of boron and phosphorus in the buried tungsten silicide layer. This new technology which offers better matched n-p-n and p-n-p at a lower cost is set to revolutionise complementary bipolar integrated circuits. The key to this new technology is the production of silicon on silicide on insulator (SSOI) substrates. The object of this project is to research the use of the Smart Cut will be established for SOI substrates using silicon, which is implanted with hydrogen at Surrey University. The knowledge gained will then be applied to two possible approaches identified for the production of SSOI substrates.
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Organisation Website: http://www.qub.ac.uk