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Details of Grant 

EPSRC Reference: GR/M83230/01
Title: ELECTRON BEAM CONTROL OF PLASMAS FOR SILICON MICROMACHINING
Principal Investigator: Braithwaite, Professor NS
Other Investigators:
Researcher Co-Investigators:
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Department: Oxford Research Unit
Organisation: The Open University
Scheme: Standard Research (Pre-FEC)
Starts: 18 August 1999 Ends: 17 August 2000 Value (£): 10,000
EPSRC Research Topic Classifications:
Plasmas - Technological
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
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Summary on Grant Application Form
Angular divergence of ions impacting on surfaces from a plasma depends on the ratio of energy gained in the long plasma region to that in the short sheath, Epl/ Esh. Electron beams directly affect the plasma component of ion energy, Epl , via an interaction with the bulk electrons. Thus, electron beams should enable the reduction of the angular divergence of ions, which will be reflected in anisotropic etching processes. Direct measurement of the angular dependence of the ion energy distribution requires more sophisticated apparatus than is available to us at present, though undoubtedly such experiments would be of great interest. It is proposed instead to set up etching experiments to demonstrate the effective collimation of ions which can be achieved using electron beam modulation of an RF plasma.
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