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Details of Grant 

EPSRC Reference: GR/M82295/01
Title: PHONON SCATTERING IN GALLIUM NITRIDE DEVICES UNDER ILLUMINATION
Principal Investigator: Kent, Professor A
Other Investigators:
Foxon, Professor CT Hughes, Dr O
Researcher Co-Investigators:
Project Partners:
Department: Sch of Physics & Astronomy
Organisation: University of Nottingham
Scheme: Standard Research (Pre-FEC)
Starts: 31 January 2000 Ends: 30 January 2002 Value (£): 55,371
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
Despite considerable research effort to date, the nature and role of defect states in Gallium Nitride (GaN) are still not fully understood. In this research, the Fellow will use nonequilibrium phonon techniques to gain information about defect in GaN which is complementary to that provided by the more established techniques, e.g. luminescence and photocurrent spectroscopy measurements. Acoustic phonons have been shown to be a sensitive probe of certain defect states in other bulk and low-dimensional semiconductors, e.g. GaAs, and we believe they will prove equally useful for studying defects in GaN. During his visit, the Fellow will develop the instrumentation to carry out an experimental study of the acoustic phonon scattering in GaN under subband and band-gap illumination. He will make phonon emission and absorption measurements using heat-pulse techniques that we have perfected in Nottingham, but with the addition of illumination of the sample. The aim of these experiments is to obtain spectroscopic information about the defect states themselves and also to study the role of defects in carrier scattering and energy relaxation processes under conditions relevant to optoelectronic applications. The results will be of value to those involved in the growth and characterization of GaN for optoelectronic devices.
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Organisation Website: http://www.nottingham.ac.uk