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EPSRC Reference: GR/M71640/01
Title: (PRF)STRAINED SEMICONDUCTOR GROWTH:COMPUTATIONAL MODELLING OF NANOSTRUCTURES AND SURFACTANT EFFECTS
Principal Investigator: Bowler, Professor DR
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Department: Physics and Astronomy
Organisation: UCL
Scheme: Postdoc Res Fellowship PreFEC
Starts: 01 October 1999 Ends: 30 September 2001 Value (£): 108,981
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
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Summary on Grant Application Form
Both first principles computer modelling and microelectronics are reaching the limits of their current technologies; there is a limit to the size of system (in terms of atoms) which can be modelled, while in microelectronics there is a growing need to develop nanometre-scale devices. These twin problems represent convergent opportunities, for the solution to the modelling problem will allow calculations on structures which may form a solution to the electronics problem. In this proposal, I will develop new methods for computational modelling which allow large length and time scales to be assessed, and apply them to understanding strained semiconductor growth. On the modelling side, I will work on a first principles methods for which the computing power required scales linearly with the system size (rather than with the cube, as for traditional methods), and on two more approximate methods which will allow modelling of extremely large systems and times (up to microns of material for hours). On the semiconductor side, I will study the formation and properties of strained, self-assembled nanostructures, particularly quantum dots in the Ge/Si (001) and InAs/GaAs (001) systems and quantum anti-wires in the Bi/Si (001) system, and also the effects of surfactants on strained growth. This proposal offers the UK the opportunity to take the lead in research into the growth and electronic properties of semiconductor nanostructures, which form one route for the development of new electronic devices.
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