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Details of Grant 

EPSRC Reference: GR/M70698/01
Title: LOW TEMPERATURE SPONTANEOUS EMISSION AND GAIN MEASUREMENTS OF GAINP LASER DIODES
Principal Investigator: Smowton, Professor PM
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: School of Physics and Astronomy
Organisation: Cardiff University
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 1999 Ends: 31 December 2000 Value (£): 50,196
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
The aim of this project is to examine the many body interactions in semiconductor lasers and by the comparison of experimental spontaneous emission data with results from the current state of the art gain calculation to better understand the level of complexity of calculation required in laser diode design. The work suggested will produce high quality experimental data that following comparison with theoretical predictions will aid in the understanding of the treatment of many body effects in semiconductor quantum well gain calculations. The focus is on lasers fabricated from GaInP/AIGaInP because this material lies in a regime, between GaAs/AIGaAs and the III- nitrides, where many body effects start to have a significant affect on device performance and yet it is a relatively well characterised material system, enabling greater confidence in the material parameters used in the modelling process, and avoids effects due to material inhomegeneties found in III- nitride structures. By taking measurements at low temperatures we can mimic the situation in room temperature III- nitride structures where Coulombic interactions have a dominant effect (kT<
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Organisation Website: http://www.cf.ac.uk