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Details of Grant 

EPSRC Reference: GR/M54568/01
Title: ROPA: STABILITY OF DEUTERATED AMORPHOUS SILICON THIN FILM TRANSISTORS
Principal Investigator: Milne, Professor WI
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Engineering
Organisation: University of Cambridge
Scheme: ROPA
Starts: 27 September 1999 Ends: 26 January 2002 Value (£): 121,800
EPSRC Research Topic Classifications:
Materials Processing
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The a-Si:H based TFT pixel switches used in present AMLCDs still suffer from instabilities under prolonged gate bias. Two possible causes of the observed instability are (a) the creation of states in the a-Si:H itself or (b) charge trapping in the gate insulator. This project will investigate the use of deuterated amorphous silicon for the manufacture of TFT switches. It is envisaged that deuterium stabilization should lead to improved stability if defect creation dominates. The use of Deuterium should also resolve the role of the Si-Si bond versus the Si- H bond breaking in the defect creation and annealing processes observed in amorphous silicon based TFTs.
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Organisation Website: http://www.cam.ac.uk