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Details of Grant 

EPSRC Reference: GR/M51604/01
Title: ACME - AL TO CU METALLIZATION FOR IMPROVED RELIABILITY OF DEEP SUB-MICRON LINES AND VIAS
Principal Investigator: Greer, Professor AL
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Avant Aviza Technology Ltd Domain Software Solutions Ltd
Ekc Motorola National Semiconductor
Nikon
Department: Materials Science & Metallurgy
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 16 August 1999 Ends: 15 February 2003 Value (£): 179,624
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. System on Chip
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
GR/M41070/01 GR/M54513/01
Panel History:  
Summary on Grant Application Form
Major challenges face the microelectronics fabrication community in back-end-of-line (BEOL) processing, with the need to improve interconnect delay times and reliability as dimensions are aggressively reduced. A key new approach is the replacement of A1 metallisation by Cu, with lines made by the damascene process and chemical mechanical polishing (CMP). However, damascene + CMP can also be applied to A1 lines, and together with innovative alloying may effect improvements; in some cases damascene A1 may be preferable to Cu-a familiar material and less need for barriers. Damascene + CMP are barely represented in the UK research community and process development in that community is now overdue if key issues are to be addressed. In multilevel metallisation, vias' reliability is crucial; dual damascene and pressure-filling are options, which need to be explored. With Cu, diffusion barriers are essential and studies of their effectiveness are needed. The collaborators in this project have experience of process development and quantification of interconnect damage through microscopy and electrical measurement. Their combination of expertise will be directed towards making test structures of damascene A1 or Cu lines with innovative via-filling, and assessing their reliability against electromigration, stress voiding and contact and barrier degradation.
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Organisation Website: http://www.cam.ac.uk