EPSRC Reference: |
GR/M39732/01 |
Title: |
EFFICIENT SEMICONDUCTOR LASERS AND LEDS FOR THE 2-5UM SPECTRAL RANGE |
Principal Investigator: |
Krier, Professor A |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Physics |
Organisation: |
Lancaster University |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
31 March 1999 |
Ends: |
30 March 2000 |
Value (£): |
27,701
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EPSRC Research Topic Classifications: |
Optoelect. Devices & Circuits |
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EPSRC Industrial Sector Classifications: |
No relevance to Underpinning Sectors |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
An existing LPE growth reactor will be used to grow a series of InAsSb/InAsSbP structures in which type II quantum confinement occurs at the interface. These structures will be evaluated using photoluminescence as a function of temperature and epitaxial growth parameters in order to quantify the radiative recombination and Auger suppression.We propose to make 0.3mm dia. Mesa-etched LEDs and then characterise them before tackling laser fabrication. Both broad area and contact stripe geometry lasers will then be fabricated based on the double hetereo junction design and following closely the personal expertise of Dr Sherstnev. Resulting devices will be full characterised, including measurements of; threshold current and temperature sensitivity, I-V curves, output power, quantum efficiency etc, as well as electroluminescence spectroscopy. Again Auger suppression will be closely investigated.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.lancs.ac.uk |