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Details of Grant 

EPSRC Reference: GR/M38506/01
Title: AMORPHOUS SILICON NON-VOLATILE MEMORIES
Principal Investigator: Snell, Dr AJ
Other Investigators:
Murray, Professor AF
Researcher Co-Investigators:
Project Partners:
Department: Sch of Engineering
Organisation: University of Edinburgh
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 1999 Ends: 31 December 2001 Value (£): 188,031
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The hydrogenated amorphous silicon (a-Si:H) memory device which is the subject of this university/industry collaborative proposal offers a timely and unique approach to a novel non-volatile memory (NVM) technology capable of meeting the predicted demands of the next generation of microelectronics. The a-Si:H NVM is a device of potentially very small area, it operates at low voltages, is extremely fast to programme and read, and also, very importantly, it is potentially compatible with industry-standard CMOS technology. Crucial to the functioning of the a-Si:H memory device is the first forming operation in which a small conducting filament is formed. All subsequent switching cycles are confined to the filament region. The programme comprises a detailed study of filament formation by a combination of advanced analytical techniques and electrical characterisation of devices, a comprehensive evaluation of the influence of device configuration and constitution on forming and subsequent operation, the establishment of quantitative mechanistic and circuit simulation models, and the development of processing methods to fully integrate a-Si:H memory devices with current CMOS technology. The design, fabrication and evaluation of an experimental test structure in the form of a 16k bytes prototype memory array will be a key deliverable of the programme.
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Organisation Website: http://www.ed.ac.uk