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Details of Grant 

EPSRC Reference: GR/M37318/01
Title: NITRIDE BASED LASER DIODES AND VCSELS
Principal Investigator: Rorison, Professor J
Other Investigators:
Allen, Professor GC Kuball, Professor M Penty, Professor R
Researcher Co-Investigators:
Project Partners:
Hewlett Packard
Department: Electrical and Electronic Engineering
Organisation: University of Bristol
Scheme: Standard Research (Pre-FEC)
Starts: 28 June 1999 Ends: 27 June 2002 Value (£): 215,581
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The aim of this project is to develop GaN based RCLED and VCSEL devices emitting in both the blue and 1.3 micron wavelength regimes. This proposal is made possible by the supply of high quality GaN based material from Hewlett Packard, who have already successfully demonstrated room temperature pulse diode lasers. They have begun supplying GaN wafer material to Bristol, which has already been processed into aingle mode waveguides. HP are currently in the process of supplying their latest state-of-the-art devices to Bristol.The device work will be underpinned by extensive material modelling and will also benefit from detailed transport studies which have already shown that a modulation doped superlattice should allow efficient carrier injection into the active region of VCSELs through the Bragg mirrors. Fabrication will be undertaken both in HP and at Bristol University using material supplied from Hewlett Packard. Fabrication and assessment of devices will proceed with a planned progression through edge emitting, RCLED and full VCSEL devices, both optical and electrical pumping schemes being employed as appropriate. Keywords describing areas of proposalOptics, Lasers, Devices, Processing, GaN
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Further Information:  
Organisation Website: http://www.bris.ac.uk