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Details of Grant 

EPSRC Reference: GR/M23977/01
Title: SPIN POLARISED ELECTRON TUNNELLING: BASIC SCIENCE & DEVICE TECHNOLOGY
Principal Investigator: Mapps, Professor D
Other Investigators:
Clegg, Professor W
Researcher Co-Investigators:
Project Partners:
Department: Communication & Electronic Eng
Organisation: University of Plymouth
Scheme: Standard Research (Pre-FEC)
Starts: 29 March 1999 Ends: 28 December 2002 Value (£): 130,956
EPSRC Research Topic Classifications:
Magnetism/Magnetic Phenomena Materials Characterisation
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
The clear demand for improved magnetic sensor performance has driven a large amount of research into magnetoresistive systems. Spin polarised ferromagnetic tunnel junctions which exhibit junction magnetoresistance (JMR) offer considerable advantages over otherwise comparable GMR multilayer structures and have recently been shown to exhibit reproducible MR of similar magnitude. It is clear that key requirements for the successful development of a JMR technology are the improvement in quality of the tunnel barrier, and micromagnetic methods of analysing switching process in nanoscale junctions. In the longer term, higher MR values have been predicted for half-metallic systems, although attempts to apply these materials are in their infancy. The aim of this proposal is to build on encouraging initial experimental and modelled results from both partners, and to exploit a unique combination of established high quality research in both magnetic devices and tunnel junction technology, to establish a UK programme which will enable the development of manufacturable JMR junction technology.
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Organisation Website: http://www.plym.ac.uk