| EPSRC Reference: |
GR/M20808/01 |
| Title: |
LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SILICON FOR THIN FILM TRANSISTORS |
| Principal Investigator: |
Milne, Professor WI |
| Other Investigators: |
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| Department: |
Engineering |
| Organisation: |
University of Cambridge |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 October 1998 |
Ends: |
30 September 2000 |
Value (£): |
87,702
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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The aim of this project is to produce micro- and poly-crystalline silicon thin films for Thin Film Transistors (TFTs) using an electron cyclotron wave resonance (ECWR) source. The deposition will be controlled using separate nucleation and growth phases. The nucleation will use alternative plasmas of SiH4 and H2 and growth will use a SiF4/H2/He plasma. The material will be characterised using XRD, TEM, Raman and electrical measurements. Optimised films will be used to fabricate thin film transistors.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.cam.ac.uk |