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Details of Grant 

EPSRC Reference: GR/M07373/01
Title: INSB QUANTUM DOT LIGHT EMITTING DIODES GROWN BY LPE
Principal Investigator: Krier, Professor A
Other Investigators:
Researcher Co-Investigators:
Project Partners:
DSTL - JGS University of Oxford Wafer Technology Ltd
Department: Physics
Organisation: Lancaster University
Scheme: Standard Research (Pre-FEC)
Starts: 25 January 1999 Ends: 24 September 2002 Value (£): 213,691
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
A novel liquid phase epitaxial growth technique - rapid slider liquid phase epitaxy (RSLPE) - will be used to grow self-organised InSb quantum dots onto GaSb, InAs & GaAs substrates. The influence of lattice mismatch and substrate orientation on the resulting epitaxy will be investigated using microscopy (AFM, SEM & TEM). Morphological studies will be followed by the encapsulation of single and multilayer Qdots and photoluminescence measurements will be made to establish the obtainable wavelengths and the size dependence of PL. A set of MOVPE grown samples will be provided from Oxford and some MBE samples will also be obtained from DERA for comparison in parallel.This project is device led materials research aimed at demonstrating a mid-infrared quantum dot LED, so further evaluation will be by including the InSb quantum dots within the active region of a GaSb LED. Because of the increased confinement, which has the effect o suppressing non-radiative Auger recombination, we expect to obtain more efficient electroluminescence with narrower spectral linewidth from such light emitting diodes at room temperature.The LEDs have practical applications, primarily in the next generation of infrared gas sensor instruments to improve health and safety in the environment and the quality of life.
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Organisation Website: http://www.lancs.ac.uk