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Details of Grant 

EPSRC Reference: GR/M03030/01
Title: FEGSEM/STM/CL STUDIES OF DEFECTS IN GAN
Principal Investigator: Cherns, Professor D
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Bristol
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 1998 Ends: 30 September 2001 Value (£): 195,870
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
We wish to modify an existing Coates and Walter FEGSEM fitted with an in-situ STM to include (a) an electronic backscattering pattern (EBSP) facility and (b) low temperature cathodoluminescence (CL). By developing a low voltage EBSP technique we intend to correlate high spatial resolution orientation mapping with CL to determine the type of boundaries and, perhaps, individual defects which control luminescence in GaN and InGaN/GaN films. We wish to carry out exploratory studies using low voltage SEM and the in-situ STM to examine the electronic properties of individual defects in GaN.
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Organisation Website: http://www.bris.ac.uk