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Details of Grant 

EPSRC Reference: GR/L95571/01
Title: OPTIMISATION OF COLOSSAL MAGNETORESISTIVE MATERIALS FOR DEVICE APPLICATIONS
Principal Investigator: Evetts, Professor J
Other Investigators:
Blamire, Professor M
Researcher Co-Investigators:
Project Partners:
Hewlett Packard Inc Pre Nexus Migration
Department: Materials Science & Metallurgy
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 20 May 1998 Ends: 19 May 2000 Value (£): 137,355
EPSRC Research Topic Classifications:
Materials Processing Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
In this project we plan to continue our successful collaborative study of colossal magnetoresistive (CMR) materials for device applications. As part of the huge world-wide research effort our collaborative has assisted in clarifying many aspects of CMR, including the strong correlation between electrical transport and induced magnetisation, the highly sensitive low field MR response from grain boundaries and heterostructures, and the role of lattice vacancies. However, much remains to be done if a useable device technology is to be developed: defining the controlling parameters of activated hopping will permit transport property engineering through the creation of lattice strain, disorder of chemical substitution; understanding the factors influencing the coercive field and its relationship with morphology and composition is vital for the development of spin tunnelling systems. Our aim is therefore to combine work on intrinsic properties of CMR materials with directed studies on thin and thick films and devices. Practical thin film devices developed in this programme will be based on heterostructures which combine materials of different functionality or result in modified intrinsic properties. Thick film technology, despite presenting materials problems of homogeneity and microstructure control, will be developed in parallel for lower cost, more robust device applications.
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Organisation Website: http://www.cam.ac.uk