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Details of Grant 

EPSRC Reference: GR/L87101/01
Title: MODULATION SPECTROSCOPY OF COMPLEX SEMICONDUCTOR HETEROSTRUCTURES: APPLICATION TO VCSELS
Principal Investigator: Hosea, Dr TJC
Other Investigators:
Lancefield, Dr D Sale, Dr TE
Researcher Co-Investigators:
Project Partners:
Pre Nexus Migration University of Sheffield
Department: Physics
Organisation: University of Surrey
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 1998 Ends: 30 September 2001 Value (£): 106,174
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
The reason MR is not routinely used by the semiconductor industry is due to the perceived difficulty in interpreting the often complex spectra. However, following our recent work, we believe we are now in a position to establish MR as a powerful non-destructive technique for the evaluation of multilayer hetero-structures. We wish to test this by characterising VCSELs, some of the most complex structures grown, and correlating results with device characteristics. We have recently been successful in showing that MR provides important information not accessible by conventional techniques, including the degree of coincidence and Rabi splitting effect between the FP and QW modes in full VCSELs at 300K. Although MR is a simple technique, we will use new enhancements, such as double modulation to remove background PL. By varying angle of incidence and polarisation of the probe, the optical properties of the cavity, QW and DBR stacks will be studied independently. Variable temperature will be used to shift the gain peak relative to the cavity mode to check how critically device performance depends on the degree of overlap. Results will be correlated with device performance including I-V characteristics and spontaneous emission spectra as a function of current, temperature and pressure.
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Organisation Website: http://www.surrey.ac.uk