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EPSRC Reference: GR/L81697/01
Title: A STUDY OF THE DYNAMICAL PROCESSES IN SEMICONDUCTOR QUANTUM WIRE AND DOT STRUCTURES
Principal Investigator: Dawson, Professor P
Other Investigators:
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Department: Physics
Organisation: UMIST
Scheme: Standard Research (Pre-FEC)
Starts: 01 May 1998 Ends: 30 April 2001 Value (£): 180,216
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
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Summary on Grant Application Form
By the use of naturally occurring growth phenomena it is now possible to produce quantum wires and dots whose size is sufficiently small to produce a significant modification to the density of states functions. It is predicted, but as yet not unambiguously observed, that such a modification will inhibit the carrier/carrier and carrier/phonon scattering processes that are responsible for fast cooling of a non equilibrium carrier distribution. If this is so we anticipate the modified scattering processes will also influence the low temperature recombination dynamics. We propose to investigate such phenomena using photoluminescence time secay measurements. The modified density of states functions should also lead to improved threshold current densities for semiconductor lasers. If this prediction is to be realised in practice then the growth of layers exhibiting high quantum efficiencies at room temperature is essential. At high temperatures we expect not only will the temperature dependence of the rates be modified but also the roles of thermally excited carrier escape and non radiative recombination due to killer centres. Thus we will extend our time decay measurements to determine the suitability of quantum wires and dots for inclusion in device structures.
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