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Details of Grant 

EPSRC Reference: GR/L81215/01
Title: NEW REGIMES OF RESONANT TUNNELING RESEARCH USING HIGH PRESSURES AND MAGNETIC FIELDS
Principal Investigator: Klipstein, Dr P
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Russian Academy of Sciences
Department: Oxford Physics
Organisation: University of Oxford
Scheme: Standard Research (Pre-FEC)
Starts: 01 November 1997 Ends: 31 October 2000 Value (£): 193,637
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal aims to build on the close relationship established over the past few years between the applicant and the Institutes for High Pressure Physics and Spectroscopy in Moscow. It will lead to the achievement of some of the first measurements of resonant tunnelling at high pressure in a very high (pulsed) magnetic field. High pressure tunnelling measurements using both DC and pulsed magnetic fields on GaAs/AlAs will lead to the development of new types of 2D 2D resonant tunnelling structure and provide a unique opportunity to explore the properties of the X conduction band and its coupling to phonons in a way that has previously not been possible. The measurements will also provide a novel way to explore a new many body effect that leads to a poorly understood energy gap in interacting 2D electron systems. In InAs/GaSb/AlSb the measurements will elucidate the interface dependent (GaAs-like, InSb-like or thin strained layer) inter-band tunnelling mechanism in n- InAs/p-GaSb diodes and will allow new types of multiple interface and multiple barrier resonant tunnelling structure to be activated and investigated. In Si/SiGe double barrier structures grown on silicon substrates, pressure will be used in a preliminary study to simulate virtual substrates of various compositions. Although pressure and magnetic field play a key role, in all cases the new understanding from the present proposal can be exploited subsequently in microwave and opto-electronic device structures activated at ambient pressure, either directly or by use of built-in strain or composition modulation.
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Organisation Website: http://www.ox.ac.uk