Details of Grant 

EPSRC Reference:	GR/L80881/01
Title:	INGAASN QUANTUM WELL STRUCTURES FOR TELECOMMUNICATIONS WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASERS
Principal Investigator:	Dawson, Professor M
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department:	Physics
Organisation:	University of Strathclyde
Scheme:	Standard Research (Pre-FEC)
Starts:	01 March 1998	Ends:	29 February 2000	Value (£):	50,798
EPSRC Research Topic Classifications:	Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:	No relevance to Underpinning Sectors
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Panel History:
Summary on Grant Application Form
We propose to investigate the optical properties of a novel direct band-gap compound semiconductor alloy, InGaAsN. This material gives luminescent emission in the 1300nm-1550nm wavelength band, but is grown on GaAs substrates. With larger electron confinement potentials than are available in alloys grown on InP, InGaAsN/A1GaAs structures offer the prospect of reduced-temperature-sensitivity laser diodes for 1300nm-1550nm telecommunications applications. Also, because of its compatibility with A1GaAs-based distributed Bragg reflector mirrors, the new alloy offers, for the first time, the prospect of single-growth monolithic VCSEL structures for this wavelength range which do not require water fusion.
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Organisation Website:	http://www.strath.ac.uk