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Details of Grant 

EPSRC Reference: GR/L73050/01
Title: ROPA: HIGH DENSITY GAAS- AND INP-BASED PHOTODETECTORS FOR 2-4UM
Principal Investigator: Haywood, Professor S
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Engineering
Organisation: University of Hull
Scheme: ROPA
Starts: 01 January 1998 Ends: 30 June 1999 Value (£): 52,530
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
A novel IR photodetector is proposed for the 2-4 mm region based on GaAs and InP substrates. It uses inter-subband transitions in an asymmetric quantum well which has thin, high barriers and thicker, lower outer barriers. The relevant transition is from a bound state in the deepest part of the well to a resonant state confined only by the high barriers. Well assymmetry allows normal incidence absorption for some device designs while the high barriers keep the dark current extremely low. This should provide detectivities >> 1011cmHz1/2W-1, while the resonant upper state ensures photo-excited carriers can escape the wells giving good responsivity.
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Organisation Website: http://www.hull.ac.uk