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Details of Grant 

EPSRC Reference: GR/L71674/01
Title: ADVANCED INGAAS/INP AVALANCHE PHOTODIODES
Principal Investigator: Rees, Professor GJ
Other Investigators:
Hill, Dr G Tozer, Professor R
Researcher Co-Investigators:
Project Partners:
Hewlett Packard Inc
Department: Electronic and Electrical Engineering
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 November 1997 Ends: 30 April 2001 Value (£): 163,704
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
The proposed programme on InGaAs/InP based avalanche diodes results from two recent significant developments; (1) new work on thin GaAs/AlGaAs avalanche structures has shown low noise behaviour beyond that predicted by established theories, and (2) recent developments in single-photon avalanche diodes (SPADs) operating at longer wavelengths (i.e. > 1um). These developments show potential for both conventional uses of avalanche detectors at up to 1.55um wavelength, such as in telecommunications but also in new applications for SPADs at these wavelengths, e.g. quantum cryptography, time-resolved fluorescence and OTDR. The programme will characterise the impact ionisation processes in InP, InGaAs, AlInAs and related multi-layer structures in order to establish better designs for both 'analogue' and photon counting devices operating at wavelengths up to 1.55um. The project will fabricate SPAD devices, initially based on established designs used in below breakdown operation and, later, will use data from the impact ionisation measurements to construct devices more specific to photon-counting operation.
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Organisation Website: http://www.shef.ac.uk