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Details of Grant 

EPSRC Reference: GR/L66441/01
Title: SILICON CARBIDE POWER DEVICES PROCESSING AND CHARACTERISATION
Principal Investigator: Mawby, Professor P
Other Investigators:
Towers, Dr M Wilks, Professor S
Researcher Co-Investigators:
Project Partners:
IXYS UK Westcode Ltd
Department: Electrical & Electronic Engineering
Organisation: Swansea University
Scheme: Standard Research (Pre-FEC)
Starts: 06 October 1997 Ends: 05 July 2001 Value (£): 203,722
EPSRC Research Topic Classifications:
Power Electronics
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The proposed work in this project will investigate the fundamental fabrication and physical processes necessary for the development of power semiconductor devices in Silicon Crabide (SiC). In particular the project will focus upon two aspects, firstly the understanding and fabrication of reliable OHMIC and SCHOTTKY contacts, and secondly the development of junction termination methods for high voltage planar devices. It is also intended to investigate the fabrication and characterisation of low voltage MOS type SiC structures, as a minor task at the end of the project. To accompany these goals, a mixture of approaches will be used. The growth of the metal interface will be studied using advance surface science techniques. The modelling of the high field termination structures will utilise the device modelling facilities that have been built up at Swansea. Westcode semiconductors are key to the success of the project, as they will supply the expertise and fabrication technology for most of the device preparation work.
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Further Information:  
Organisation Website: http://www.swan.ac.uk