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Details of Grant 

EPSRC Reference: GR/L65963/01
Title: IRRADIATION DAMAGE TECHNOLOGY FOR MANUFACTURABLE SUPERCONDUCTING DEVICES
Principal Investigator: Blamire, Professor M
Other Investigators:
Welland, Professor M Jeynes, Professor C Moore, Dr DF
Tarte, Dr EJ
Researcher Co-Investigators:
Project Partners:
NIST Nat Inst of Standards & Tech (US) Oxford Instruments Ltd
Department: Materials Science & Metallurgy
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1997 Ends: 30 September 1999 Value (£): 121,477
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
We have shown that junctions created in high temperature superconductors by focused electron beam irradiation (FEBI) have almost ideal characteristics and that they provide great flexibility in the prototyping and small scale production of superconducting circuits; in particular, structures consisting of closely coupled junctions permit the development of a range of injection devices impossible in low Tc structures. It is the primary aim of this programme to develop a method by which the high uniformity and yield of FEBI junctions can be reconciled with the throughput required for large scale device integration, using masked ion implantation damage (MID) in which ions such as Ne+ and H+ modify the superconductor in regions exposed in a very high definition mask layer. The development of techniques by which ion implantation can be performed with extreme lateral resolution is important because of the future development of nanometer scale semiconducting and other devices; thus the fabrication of superconducting devices is a fundamental goal in this programme, but this development will also provide the most accurate possible test of existing models of scattering and damage processes, and will allow the development of improved masking techniques for localised ion implantation in semiconductor and other device fields.
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Organisation Website: http://www.cam.ac.uk