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Details of Grant 

EPSRC Reference: GR/L62757/01
Title: H AND NA PASSIVATION IN CIGS BASED SEMICONDUCTORS AND THE RELATIONSHIP TO IMPROVED PHOTOVOLTAIC EFFICIENCIES
Principal Investigator: Pilkington, Dr RD
Other Investigators:
Martin, Professor RW Tomlinson, Dr R Hill, Dr A
Researcher Co-Investigators:
Project Partners:
Department: Advanced Materials & Surfaces (Res Cen)
Organisation: University of Salford
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1997 Ends: 30 September 2000 Value (£): 175,575
EPSRC Research Topic Classifications:
Materials Processing Solar Technology
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal is concerned with the fabrication of innovative thin film solar cell devices based on CuIn/GaSe2 (CIGS) absorber layers modified by the incorporation of hydrogen and or sodium via ion implantation. We will employ our unique advanced ion implantation facility to introduce atomic and molecular hydrogen and atomic sodium in a controlled and reproducible manner. We will establish the effect of implantation energy and dose on the opto-electronic properties of the implanted films and devices.Carrier lifetime measurements will be made to gain a fundamental understanding of intrinsic defect state passivation This will give a figure of merit for the implanted CIGS layers. These defect states are responsible for efficiency loss in this family of solar cell devices.This procedure together with the other analytical techniques, including photo luminescence, photoacousitc and photoconductivity spectrocopy will enable us to gain a full understanding of the fundamental mechanisms involved in defect control and also to define appropriate implant damage repair regimes with a view to the specification of a route to device fabrication.
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Organisation Website: http://www.salford.ac.uk