| EPSRC Reference: |
GR/L35034/01 |
| Title: |
SURFACE EMITTING HOT ELECTRON LIGHT EMITTERS AND LASERS |
| Principal Investigator: |
Balkan, Professor N |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Essex |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 September 1997 |
Ends: |
28 February 2001 |
Value (£): |
265,749
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| EPSRC Research Topic Classifications: |
| Materials Processing |
Optoelect. Devices & Circuits |
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| EPSRC Industrial Sector Classifications: |
| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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We propose to study light emission and lasing associated with hot carrier longitudinal transport in HELLISH (Hot Electron Light Emitting and Lasing Semiconductor Heterojunction) devices consisting of the following heterostructures:Type I1. p+-Gal-xAlxAs / n+ -Gal-xAlxAs with GaAs quantum well in the n-side of the depletion region.2. p+-InP / n+-InP with InGaAsP quantum well in the n-side of the depletion region.Type II1. p-GaAs / n+ Gal-xAlxAs, with GaAs quantum well in the n+ layer next to the junction plane.2. p-OnGaAsP / n+InP, with InGaAsP quantum well in the n+ layer next to the junction plane.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.sx.ac.uk |