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Details of Grant 

EPSRC Reference: GR/L15678/01
Title: NANOELECTRONICS TECHNOLOGY AND ULTRAFAST DEVICES (ROLLING GRANT)
Principal Investigator: Beaumont, Professor S
Other Investigators:
Stanley, Professor C Taylor, Mr M MacIntyre, Dr D
Davies, Professor JH Weaver, Professor JMR Asenov, Professor A
Thoms, Dr S Wilkinson, Professor C Davies, Dr J
Long, Professor AR Thayne, Professor I
Researcher Co-Investigators:
Project Partners:
Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 1996 Ends: 31 July 2000 Value (£): 2,871,770
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. RF & Microwave Technology
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
We propose to continue to develop manufacturable, well-specified processes for the fabrication of III-V based HEMTs targeted on applications predominantly above 60 GHz, but offering enhanced performance down to a few GHz. Technological progress will be closely coupled with the development of a deeper understanding of the physics of short-gate HEMT operation through Monte-Carlo models of real devices, calibrated against measurements and providing a predictive capability for state-of-the-art transistors at frequencies where measurements cannot be made. Advanced materials growth technology (delta-doping and metamorphic growth) will be exploited to enhance the performance of GaAs-based and InP-based devices, with the long-term objective of replacing InP substrates with more manufacturable and economical GaAs wafers. Ultimately we plan to advance the state-of-the-art in transistor fabrication towards THz devices. In parallel with this device programme, we propose to advance the state-of-the-art in electron beam lithography towards true 30nm design rules and 3nm resolution for novel application in electronics and optoelectronics.
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Organisation Website: http://www.gla.ac.uk