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Details of Grant 

EPSRC Reference: GR/L14473/01
Title: THERMOVOLTAIC DEVICES IN METAMORPHIC INGAAS/GAAS
Principal Investigator: Nicholas, Professor RJ
Other Investigators:
Walker, Dr W Mason, Dr NJ
Researcher Co-Investigators:
Project Partners:
Department: Oxford Physics
Organisation: University of Oxford
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1996 Ends: 30 September 1998 Value (£): 25,443
EPSRC Research Topic Classifications:
Materials Processing Optoelect. Devices & Circuits
Solar Technology
EPSRC Industrial Sector Classifications:
No relevance to Underpinning Sectors Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
The principle of thermophotovoltaic (TPV) electricity generation is to convert infra-red radiation from an incandescent emitter into DC electricity uising a suitable photovoltaic device. Recent progress has been based on GaSb and on InGaAs/InP; both are expensive because of the high substrate cost. We propose to make InGaAs TPV cells based on relaxed layers of InGaAs grown on GaAs. The technology is difficult as tight criteria have to be met on the quality and morphology of the relaxing layers. Surrey have been partners in an ESPRIT consortium which has just promulgated design rules to meet the criteria. This project will test these rules in a real device context. The project will be carried out by teams from Oxford, Northumbria and Surrey Universities. We aim at devices at three bandgaps for operation with black-body emission and with thermoluminescence which concentrates the power in a narrow wavelength range. Oxford will grow test layers, relaxed buffer structures and finally structures complete with TPV pn diodes on top. Surrey will design and assess the structures, and Northumbria will fabricate devices and characterise them.EEV Ltd will be closely interested in the programme and will guide it towards achieving a device with real potential for commercial manufacture.
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Further Information:  
Organisation Website: http://www.ox.ac.uk