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Details of Grant 

EPSRC Reference: GR/L11984/01
Title: OPTOELECTRONIC DEVICES IN PIEZOELECTRIC, STRAINED LAYER III-V QUANTUM WELL STRUCTURES GROWN ON (111) B'
Principal Investigator: Rees, Professor GJ
Other Investigators:
Houston, Professor P Woodhead, Dr J Skolnick, Professor M
Mowbray, Professor D
Researcher Co-Investigators:
Project Partners:
Department: Electronic and Electrical Engineering
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 20 January 1997 Ends: 19 January 2000 Value (£): 251,557
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
We propose a combined programme of research onto novel (opto-)electronic devices and supporting physics. Three novel devices are proposed which exploit piezoelectric effects All-Optical S-SEED, Integrated Laser/Waveguide Modulator and Piezoelectric HEMT. The first two optical devices will be investigated in the InGaAs/AlGaAs/GaAs(111)B system in which we have most experience. This device work will be supported by a study of the effect of charge build up and decay in the InGaAs/GaAs(111)B system. We shall also investigate the long wavelength, strained, piezoelectric InGaAs/InAlAs system grown on InP(111)B, compatible with long haul optical fibre communications. The HEMT device will be investigated in this latter system. The experimental physics and device work will be supported by theoretical studies and device modelling.
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Organisation Website: http://www.shef.ac.uk