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Details of Grant 

EPSRC Reference: GR/L07598/01
Title: LATTICE MATCHING OF SUBSTRATES FOR GROWTH OF GALLIUM NITRIDE
Principal Investigator: Macdonald, Professor JE
Other Investigators:
Westwood, Dr D
Researcher Co-Investigators:
Project Partners:
Department: School of Physics and Astronomy
Organisation: Cardiff University
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1996 Ends: 30 September 1999 Value (£): 87,712
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
GaN and related materials are poised to have a major impact in the fields of optoelectronic devices operating across the whole visible spectrum and electronic devices operating in hostile and high temperature environments. The critical hindrance to their widespread application is the complete absence of a lattice-matched substrate material. We propose a timely series of exploratory, potentially high-payoff, low cost investigations of the early stages of growth based on a novel idea aimed at solving the lattice-matching problem. The idea, for which we have filed a patent, makes use of high quality cubic substrates, InSb (001) and CdTe (001), whose lattice constants are almost exactly a factor of sqrt 2 larger than that of the cubic phase of GaN. Thus effective lattice matching will be possible provided the nitride epilayer can be induced to grow in a 45-rotated orientation with respect to the substrate. The primary aim of the project is to achieve this objective. The less speculative secondary aim is to understand and control the nucleation and strain relaxation processes in two other promising substrates, SiC and LiGaO2, the first being poorly lattice-matched whereas the latter represents a class of orthorhombic and tetragonal substrates well lattice-matched along one axis only.
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Organisation Website: http://www.cf.ac.uk