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Details of Grant 

EPSRC Reference: GR/L04405/01
Title: THEORY OF SILICON-GERMANIUM QUANTUM DEVICES
Principal Investigator: Abram, Professor R
Other Investigators:
Brand, Dr S
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Durham, University of
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 1997 Ends: 31 December 1999 Value (£): 129,488
EPSRC Research Topic Classifications:
Materials Characterisation
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Summary on Grant Application Form
The proposal is concerned with the theory and modelling of SiGe-based field effect transistor (FET) structures, with an emphasis on concepts which are at least a step beyond conventional devices. A central feature of the project will be the provision of theoretical support for experimental research that is just beginning at DRA Malvern and the Cavendish Laboratory. In addition the investigations are intended to fill a perceived gap in the UK portfolio of research that lies between fundamental electronic structure calculations and the modelling of conventional transistors. Topics to be addressed include velocity modulations transistors in which gate control moves electrons between high and low mobility regions in an effort to relax the capacitive limitations on FET performance; the electronic structure and hole transport properties of Ge-rich strained wells with potential for fast p-channel devices; and effects deriving from the interactions of carriers in closely spaced wells such as frictional drag and a possible superfluid condensation of electronic-hole systems. The project involves the further development and application of electronic structure and device modelling software produced in Durham, and the use of many body theory.
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