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Details of Grant 

EPSRC Reference: GR/L03583/01
Title: TEM/HRTEM STUDIES OF ANTIMONY-BASED III-V HETEROSTRUCTURE LAYERS GROWN BY MOVPE AND MBE
Principal Investigator: Wilshaw, Professor P
Other Investigators:
Booker, Dr GR Grovenor, Professor C
Researcher Co-Investigators:
Project Partners:
Department: Materials
Organisation: University of Oxford
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 1996 Ends: 31 December 1998 Value (£): 68,986
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
To perform TEM/HRTEM structural studies at Materials Department, Oxford, on Sb-based III-IV epitaxial layers and to interpret the results. MOVPE InAs/GASB, GaSB/GAInSb and InAS/GaInSb layers will be grown at Clarendon Laboratory, Oxford University, and MBE InAs/GaSb/A1Sb and InASSB/InAS layers at Physics Department, Imperial College, London. Some TEM/HRTEM studies may also be made on MOVPE A1AsSB/GaAsSb layers grown at British Telecom, Matlesham. The TEM/HRTEM examinations will directly reveal layer geometries, thickness and non-uniformities; interface sharpness, polanarity; atomic steps and step-bunching; dislocations; stacking faults and twins; and atomic ordering and phase separation. All of these non-uniformists and inhomogeneties can adversely affect the material and device properties. Correlations will be made between structures; growth methods and conditions; and electrical optical and device properties. The results will provide a good understanding of the processes occurring enable layers with optimum structures to be grown and lead to better materials and devices. The Clarendon Laboratory, Oxford, the Physics Department, Imperial College and British Telecom, Martlesham, do not have their own in-house facilities to perform these TEM/HRTEM studies.
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Organisation Website: http://www.ox.ac.uk