| EPSRC Reference: |
GR/K89962/01 |
| Title: |
CHARACTERISATION AND MODELLING OF LOW DAMAGE ION ETCHING |
| Principal Investigator: |
Wilkinson, Professor C |
| Other Investigators: |
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| Department: |
Electronics and Electrical Engineering |
| Organisation: |
University of Glasgow |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 December 1996 |
Ends: |
30 April 1999 |
Value (£): |
135,712
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Summary on Grant Application Form |
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Dry etching using ions rather than wet chemical etching has become the preferred route for the fabrication of nanostructures. A disadvantage of dry etching is ion-induced damage. We have developed very low damage etches in Glasgow but presently lack a sensitive means of discriminating between low damage process. We propose three new techniques, one using an AFM and two using quantum devices which should be very sensitive to the presence of traps. The underlying causes of the damage are not yet well understood. We propose to continue our theoretical studies into the mechanisms. We have developed low damage etching of GaAs in SiCl4. Using the new low energy mass separated implanter at Salford University, we propose to etch and measure damage as a function of depth and specie (SiCl4, SiCl3 etc.). This will produce a wealth of information both to test the theory and to give insight into the mechanisms in reactive ion etching.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.gla.ac.uk |