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Details of Grant 

EPSRC Reference: GR/K52423/01
Title: INVESTIGATION OF LIGHT EMISSION FROM SILICON AND GERMANIUM NANOSTRUCTURES
Principal Investigator: Bayliss, Professor S
Other Investigators:
Davis, Professor E
Researcher Co-Investigators:
Project Partners:
Department: Applied Physics
Organisation: De Montfort University
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1995 Ends: 30 September 1997 Value (£): 59,952
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
The project aims to determine whether it would be possible to produce Si or Ge full-colour electro-luminescent addressable displays at room temperature. This involves a detailed investigation of the mechanisms of Si/Gi confinement luminescence. Nanostructures of Si and Ge will be grown by (i) in-situ uhv co-evaporation with SiO2(:N/Ar/H) in a VG ESCA3; (ii) rf spluttering from Si/Ge targets in O/N/Ar/H plasma; (iii) de unbalanced magnetron spluttering from Si/Ge in O/N/Ar/H. The samples will be characterised for composition and structure by XPS, TEM, IR at LUT; esr, pds and Raman at UL, and EXAFS & SAX at SRS. Optical bandgaps and reflectance in vis/uv will be measured at LUT and in the vuv at SRS, to study the effect of confinement. Time and energy resolved photoluminiscence will be studied at LUT will tuneable vis/uv excitation, and at the SRS with tuneable vuv excitation. Information on electroluminescence (EL) will be obtained by spluttering ITO contacts on the samples in-situ. Transient photoconductivity (TPC) will also be measured and used to produce a defect on DOS. The effects of hydrogenation and dangling bands are expected to be crucial in the efficiency of PL, TPC and EL. Finally, any degradation of PL and EL on ageing by (V)uv irradiation will be studied to determine whether it is possible to provide a stable nanostructured material.
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Organisation Website: http://www.dmu.ac.uk