| EPSRC Reference: |
GR/K31039/01 |
| Title: |
THEORETICAL STUDIES OF SURFACTANT MEDIATED EPITAXIAL GROWTH AT SEMICONDUCTOR SURFACES |
| Principal Investigator: |
Srivastava, Professor G |
| Other Investigators: |
|
| Researcher Co-Investigators: |
|
| Project Partners: |
|
| Department: |
Physics |
| Organisation: |
University of Exeter |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 November 1994 |
Ends: |
31 October 1997 |
Value (£): |
89,673
|
| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
|
|
| EPSRC Industrial Sector Classifications: |
|
| Related Grants: |
|
| Panel History: |
|
|
Summary on Grant Application Form |
|
We propose to make detailed first-principles studies of surfactant mediated epitaxial growth of lattice mismatched semiconductor heterostructures. These studies will be based on the application of the density functional theory and an ab-initio planewave pseudopotential method. Growth of Ge and Si on Si (100), Si (111) and InP(100) will be considered, with Sb and Pb acting as surfactant layers. These studies will be aimed at providing guidelines for choosing the best surfactant and the optimum conditions for an uniform growth of one type of semiconductor upon another.
|
|
Key Findings |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Potential use in non-academic contexts |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
|
Impacts |
|
| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
|
| Date Materialised |
|
|
|
|
Sectors submitted by the Researcher |
|
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
|
| Project URL: |
|
| Further Information: |
|
| Organisation Website: |
http://www.ex.ac.uk |