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Details of Grant 

EPSRC Reference: GR/K11178/01
Title: THIN SILICON ON INSULATOR STRUCTURES PRODUCED BY DIRECT WAFER BONDING AND ETCH STOP TECHNOLOGY
Principal Investigator: Gamble, Professor H
Other Investigators:
Mitchell, Dr NSJ Armstrong, Dr B M Armstrong, Professor G A
Researcher Co-Investigators:
Project Partners:
Department: Sch of Electronics, Elec Eng & Comp Sci
Organisation: Queen's University of Belfast
Scheme: Standard Research (Pre-FEC)
Starts: 01 June 1995 Ends: 31 December 1998 Value (£): 326,053
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
Determination of optimum process for producing sub 200nm silicon on insulator layers by direct wafer bonding. Study the quality of epitaxial silicon grown on boron doped Si-Ge etch stop layers. Optimise silicon and silicon-germanium epitaxial growth procedures for wafer bonding applications. Compare the quality of epitaxial layer SOI with that produced by polish stop technology.
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Further Information:  
Organisation Website: http://www.qub.ac.uk