| EPSRC Reference: |
GR/K11178/01 |
| Title: |
THIN SILICON ON INSULATOR STRUCTURES PRODUCED BY DIRECT WAFER BONDING AND ETCH STOP TECHNOLOGY |
| Principal Investigator: |
Gamble, Professor H |
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| Department: |
Sch of Electronics, Elec Eng & Comp Sci |
| Organisation: |
Queen's University of Belfast |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 June 1995 |
Ends: |
31 December 1998 |
Value (£): |
326,053
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
Materials Synthesis & Growth |
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Summary on Grant Application Form |
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Determination of optimum process for producing sub 200nm silicon on insulator layers by direct wafer bonding. Study the quality of epitaxial silicon grown on boron doped Si-Ge etch stop layers. Optimise silicon and silicon-germanium epitaxial growth procedures for wafer bonding applications. Compare the quality of epitaxial layer SOI with that produced by polish stop technology.
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Key Findings |
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.qub.ac.uk |