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Details of Grant 

EPSRC Reference: GR/J98349/01
Title: THEORY OF ELECTRONIC TRANSPORT IN IMPERFECT HETEROSTRUCTURES.
Principal Investigator: Davies, Professor JH
Other Investigators:
Researcher Co-Investigators:
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Department: Electronics and Electrical Engineering
Organisation: University of Glasgow
Scheme: Standard Research (Pre-FEC)
Starts: 01 March 1994 Ends: 31 March 1997 Value (£): 126,539
EPSRC Research Topic Classifications:
Condensed Matter Physics
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Summary on Grant Application Form
Ionized impurities in a heterostructure generate a large, long-ranged random potential in a 2DEG. This is shown by the breakdown of the quantised conductance at lengths over 0.3 mm, far below the mean free path. Our previous theory agreed well with early experiments, but recent measurements show quantized conductance in wires 4 mm long. There may be too much disorder in the simulations, and calculations of magneto-capacitance will allow us to test this independently. A reduction in disorder implies that the ionized impurities must be correlated; these calculations will provide the first direct measure of the correlation. They will also test whether the width of Landau levels in a 2DEG is directly related to the single particle lifetime. Calculations of the electronic structure of gated wires will provide insight on the surface states, whether they are pinned or frozen , and on possible motion of ionized donors. We will also assess the role of strain in confining electrons. We will calculate the effect of single impurities on the I(V) characteristics of resonant tunnelling, and their effect on the peak : valley ratio. This will include both large conventional devices, quantum dots, and electron-electron interaction in resonant tunnelling and other low dimensional systems like point contacts.
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