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Details of Grant 

EPSRC Reference: GR/J89897/01
Title: THEORETICAL STUDIES OF HIGH PRESSURE PHASES IN SEMICONDUCTORS
Principal Investigator: Crain, Professor J
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Sch of Physics and Astronomy
Organisation: University of Edinburgh
Scheme: Standard Research (Pre-FEC)
Starts: 10 May 1994 Ends: 09 May 1997 Value (£): 1,522
EPSRC Research Topic Classifications:
Condensed Matter Physics
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
We seek to obtain 400 hours/year for three years on the EPSRC RAL Cray supercomputer. This will form the major computational resource for a linked experimental and theoretical physics programme devoted to exploring the physics of semiconductors under high pressure. The theoretical aspect of this work will involve first-principles calculations of total energy, electronic structure and optical properties of several families of semiconductors with a view to understanding the effects of high pressure on structural stability and bonding changes at phase transitions. The technique we will apply (the Full- potential Linear Augmented Plane Wave method) is extremely accurate but is highly computer-intensive and memory-demanding. The code has been custom- vectorized for efficient operation on the Cray XMP and YMP. We will specifically study high-pressure effects and phase transitions in III-V, II-VI and I-VII compound semiconductors. Across this series there are wide variations in ionicity, bondlength and d-p hybridisation. Understanding pressure effects in these important materials is both of immense fundamental interest and potential value in band structure and device engineering. The results of these calculations will be compared to those obtained experimentally using a novel x-ray detection method and synchrotron radiation from the SRS, Daresbury.
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