| EPSRC Reference: |
GR/J85257/01 |
| Title: |
THE HOT ELECTRON PHYSIS OF SI:SIGE MODFETS GROWN ON (100) AND VICINAL SUBSTRATES |
| Principal Investigator: |
Thorton, Dr T |
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| Department: |
Electrical and Electronic Engineering |
| Organisation: |
Imperial College London |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
13 June 1994 |
Ends: |
12 November 1997 |
Value (£): |
131,474
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
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Summary on Grant Application Form |
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Fabrication of sub-micron gate n-channel Si:SiGe MODFETS and the study of hot-electron physics in these devices. Investigation of mini-band transport in gated Si:SiGe heterostructures grown on vicinal substrates. Assess the use of vicinal Si:SiGe heterostructures as tunable infrared sources.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.imperial.ac.uk |