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EPSRC Reference: GR/J77986/01
Title: HIGH RESOLUTIONX-RAY SCATTERING STUDY OF INTERFACE STRUCTURE AND RELAXATION IN 2-6 SEMICONDUCTORS
Principal Investigator: Tanner, Prof. B
Other Investigators:
Hogg, Dr J Lunn, Mr B
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Durham, University of
Scheme: Standard Research (Pre-FEC)
Starts: 21 November 1994 Ends: 20 November 1996 Value (£): 75,878
EPSRC Research Topic Classifications:
Materials Characterisation
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Summary on Grant Application Form
We propose a programme of structural studies on epitaxial systems of II-VI compounds using high resolution x-ray scattering and topography. The principal aim will be to investigate the structure of interfaces in MBE grown multilayers and relate this to electronic and optical behaviour in quantum well systems. A secondary aim will be to study the relaxation process in thick highly strained single layers and provide stringent tests of theoretical models of the process.
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