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Details of Grant 

EPSRC Reference: GR/J77436/01
Title: CARBON DOPING IN GAAS, ALGAAS ANS INGAAS
Principal Investigator: Goodhew, Professor PJ
Other Investigators:
Bullough, Dr T
Researcher Co-Investigators:
Project Partners:
Department: Materials Science & Eng
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 28 September 1994 Ends: 27 September 1996 Value (£): 151,693
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
This programme is directed towards the control and understanding of carbon doping in III-V materials grown by CBE. In particular we will study the stability and site location of carbon in highly doped GaAs, and the behaviour of C in AlGaAs and InGaAs over a range of compositions. Local vibrational mode spectroscopy (LVM) will be used to determine site location while parallel TEM and SIMS studies will enable us to determine the stability of the dopant.
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Organisation Website: http://www.liv.ac.uk