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Details of Grant 

EPSRC Reference: GR/J75883/01
Title: INTELLIGENT OPTOELECTRONIC POSITION SENSITIVE DETECTORS USING STANDARD CMOS TECHNOLOGIES
Principal Investigator: Lee, Dr P
Other Investigators:
Davies, Professor P
Researcher Co-Investigators:
Project Partners:
Department: Sch of Engineering & Digital Arts
Organisation: University of Kent
Scheme: Standard Research (Pre-FEC)
Starts: 01 September 1994 Ends: 31 December 1997 Value (£): 147,464
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
To build an Intelligent Position Sensitive Detector (I-PSD), based on the lateral photo-effect, with improved performance by developing mixed-signal circuits for on-chip signal conditioning, linearisation and signal processing. Progress:As outlined in the original proposal, the initial part of the project is concerned with investigating and developing PSD structures suitable for implementation in standard CMOS technologies. The process chosen was the AMS 1.2-m CMOS process. This process is also compatible with the AMS 1.2-m BiCMOS process which will be useful for investigating further structures. A test chip has been developed which contains 10 different PSD type structures which are designed to enable the measurement of the optical properties of the process and the performance of the PSD structures. The test structures comprise basic photodiodes, photodiodes with light shields, linear PSDs and 2-dimensional PSDs. Two novel structures which include controlling transistors have also been included. The test chip which measured 2.56mm x 5.28mm was sent off for fabrication through the AMS Multi-product wafer run on Jan 24th. The fabrication run is due to start on Feb 3rd and it is planned that samples will be returned within 12 weeks. A set of precision translation stages have been purchased to enable the development of suitable optical testing and measurement methods for the PSDs. A number of commercially available PSD devices have been purchased to evaluate the performance of the test equipment while waiting for the return of the test silicon. Investigation into suitable signal conditioning circuits for the above PSD structures is continuing and suitable test circuits will be developed when the testing of the PSD structures is complete.
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Organisation Website: http://www.kent.ac.uk