Details of Grant 

EPSRC Reference:	GR/J69912/01
Title:	POLY - SI ANALOGUE CIRCUITS ON GLASS FOR 2 - DIMENSIONAL IMAGING ARRAYS
Principal Investigator:	Armstrong, Dr B M
Other Investigators:	Mitchell, Dr NSJ Gamble, Professor H
Researcher Co-Investigators:
Project Partners:
Department:	Sch of Electronics, Elec Eng & Comp Sci
Organisation:	Queen's University of Belfast
Scheme:	Standard Research (Pre-FEC)
Starts:	10 August 1994	Ends:	09 March 1997	Value (£):	102,917
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Summary on Grant Application Form
A novel LPCVD reactor will be employed to perform sequential in-situ glass substrate pre-clean, passivation and silicon deposition. Similar sequential processing will be applied to the gate dielectric and electrode growth in order to produce a high quality TFT process suited to the manufacture of analogue circuits designed by Cambridge University. Crystallisation processes are required to achieve a large grain size in the polycrystalline silicon. Both long-time low temperature and short time high temperature anneal processes will be examined. Passivation of grain boundaries will be investigated using both fluorination during layer growth and plasma hydrogenation after layer growth. In contrast to silicon, alloy layers of Silicon-Geranium can be deposited by RTCVD at low temperature with very low oxygen contamination levels. A deposition process and crystallisation schedule will be established for SiGe and it's potential for TFT fabrication established. Non-mass separated ion implantation is ideal for large area microelectronics. A prototype system has already been built and used successfully at QUB. An upgraded version of this system will be built to provide both B and P implantation for A4 size plates. In all the processes investigated the suitability for integration with imaging technology and the capability of expansion to large area will be established.
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Organisation Website:	http://www.qub.ac.uk