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Details of Grant 

EPSRC Reference: GR/J49488/01
Principal Investigator: Peter, Professor LM
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Chemistry
Organisation: University of Bath
Scheme: Standard Research (Pre-FEC)
Starts: 01 January 1994 Ends: 31 December 1995 Value (£): 154,041
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
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Panel History:  
Summary on Grant Application Form
To understand the origin of the luminescence in PS To understand and control pore initiation and propagation during PS formation To use optical and spectroscopic techniques to study PS growth in situ To characterise the microstructure of PS by TEM, STM and AFM To obtain electroluminescence and i-V characteristics of single Si pillars by STM To investigate the chemical modification of low dimensional Si structuresProgress:NOTE The work at Bath has proceeded in parallel with efforts in Southampton (Ref: GR/J49402) and Oxford (GR/J45725). This report should be considered jointly with those for the two other groups. Collaboration between the groups has been fostered by quarterly meetings and by exchange of research staff for measurements and discussion. Work on the preparation and characterisation of porous silicon has made excellent progress in Bath. A dedicated system for etching in HF / ethanol has been set up, and large numbers of wafers have been anodised under different conditions. A novel capacitance technique has been developed to follow the increase of internal surface area during etching, and the evolution of particle size has been correlated to the photoluminescence behaviour. Most of the work has concentrated on PS layers grown on n+ (100) substrates. Studies of photoluminescence and electroluminescence have also made very good progress, and we have developed a quantum confinement model to explain the potential dependent quenching and tuning of both photoluminescence and electroluminescence. Ex-situ AFM studies of pure formation are currently in progress, and SEM / TEM studies are also underway. Accurate calibration of film thicknesses has been carried out by profilometry following removal of the PS layer by an alkaline etch. In-situ infrared studies have just begun following construction of an ATR set-up based on float grown Si wafers cur as parallelograms. This arrangement is being used currently to examine changes in surface termination on exposure of PS to different electrolyte solutions. Attempts are also being made to modify the surface of the silicon with organic groups, and this will shortly be studies by FTIR. Overall, we are on target with the research programme in Bath. Future efforts will focus on contact problems and on surface modification, as well as an anodisation of p- and n- substrates.
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Organisation Website: http://www.bath.ac.uk