| EPSRC Reference: |
GR/J45725/01 |
| Title: |
PRODUCTION AND CHARACTERISATION OF SILICON BASED PHOTOLUMINESCENT AND ELECTROLUMINESCENT DEVICES |
| Principal Investigator: |
Hutchison, Dr JL |
| Other Investigators: |
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| Department: |
Materials |
| Organisation: |
University of Oxford |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 April 1994 |
Ends: |
31 July 1996 |
Value (£): |
216,918
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| EPSRC Research Topic Classifications: |
| Optoelect. Devices & Circuits |
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Summary on Grant Application Form |
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To characterise the microstructure of porous silicon by transmission electron microscopy, atomic force microscopy and X-ray diffraction. To understand the origin of luminescence in porous silicon. To manufacture electroluminescent device structures.Progress:This project forms part of a porous silicon consortium involving the Universities of Southampton and Bath. Our post doctoral assistant Dr. G. Wakefield joined the project in August 1994. Since then we have installed a new Technoorg/Linda ion beam thinner which is now performing very close to its specification, and which has a very high thinning rate relative to more conventional ion-milling equipment. We have been preparing porous silicon layers by the conventional anodizing, etching, drying route to layers which are critical point dried, using liquid CO2 as the exchange gas. These critical point dried layers appear to be much more luminescent and this may be due to the improved perfection of the fine network structure in the absence of changes brought about by the capillary forces which will act on the structure during conventional thermal drying. Cross sectional transmission electron microscopy (TEM) studies are now under way to confirm this. TEM has also been performed on the material produced at Bath University by the conventional porous Si route and on the finely etched electron beam lithography defined structures made at Southampton. The results for the Bath materials showed the expected decrease in silicon feature size with increased leaching times. Work is also under way to process the porous silicon layers into device structures. Two approaches are being investigated: one approach is using an inert insulating polymer to fill the porous structure in order to facilitate effective metallization of the surface; the other approach is to use the conducting polymers developed by Dr. P. Burn (Organic Chemistry Department, Oxford University) for both filling the porous structure and also making electrical contact to the porous silicon. We have not yet commenced the patterned anodization and metallization work, since the great improvements in luminescence offered by critical point drying have led to a change in priorities. It is anticipated that some of the patterned anodization work will start around April 1995.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ox.ac.uk |