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Details of Grant 

EPSRC Reference: GR/J40621/01
Title: A MODIFIED FORCE MICROSCOPE AS A LOW TEMPERATURENM SCALE PROBE OF SUB-MICRON SEMICONDUCTOR DEVICES.
Principal Investigator: Smith, Professor CG
Other Investigators:
Welland, Professor M
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 1994 Ends: 31 January 1997 Value (£): 123,736
EPSRC Research Topic Classifications:
Materials Characterisation Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
We will use a modified scanning force microscope (SFM) with a conducting tip at low temperatures to modify the behaviour of a sub-micron GaAs device. We will create images in which the contrast is provided by the variation in some physical phenomena in the device such as transmission probability in a 1-D ballistic constriction, with tip position. The voltage on the tip will cause a scattering potential in the conducting region of the device. The scattering will depend on which part of the wave function the probe is over so we hope to image the wave function in this manner. Using the SFM as a capacitance microscope we will place it above a quantum box in order to observe single electron charging events in the working device below. In this way we should be able to count the movement of single electrons from one side of the box to the other. Finally we will use the probe to create local damage above a working device and observe the resulting effects in the device characteristics. With a magnetic top we will modify Aharonov Bohm effects in a ring or dot device.
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Organisation Website: http://www.cam.ac.uk