EPSRC Reference: |
GR/J37966/01 |
Title: |
CORRELATION OF STRUCTURAL AND ELECTRICAL PROPERTIES OF DEFECTS WITHIN MBE GROWN SIGE/SI |
Principal Investigator: |
Humphreys, Professor Sir C |
Other Investigators: |
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Researcher Co-Investigators: |
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Project Partners: |
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Department: |
Materials Science & Metallurgy |
Organisation: |
University of Cambridge |
Scheme: |
Standard Research (Pre-FEC) |
Starts: |
01 September 1993 |
Ends: |
31 August 1996 |
Value (£): |
199,108
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EPSRC Research Topic Classifications: |
Materials Characterisation |
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EPSRC Industrial Sector Classifications: |
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Related Grants: |
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Panel History: |
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Summary on Grant Application Form |
The TEBIC technique (EBIC in a STEM or TEMSCAN) reveals inhomogeneities in the electrical properties of materials. The structural properties of defects may be simultaneously observed. A double tilt/cold stage/EBIC holder will be developed for a TEMSCAN and used to ascertain dislocation core structures and charge carrier recombination properties at dislocations. Warwick have agreed to supply a number of specially grown MBE SiGe/Si samples for study. Samples of varying composition/ thickness will provide regions of pseudomorphic, partially relaxed and fully relaxed material for investigation. Comparison will also be made of clean and intentionally contaminated layers with transition metal impurities. Structural assessment of defects will be performed using conventional TEM. Stereo imaging may also be used to ascertain the spatial distribution of defects within a film, and CBED, EDX and EELS used for composition determination in situ. The nature of defect sources and the mechanisms of dislocation generation will also be investigated.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
Description |
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Summary |
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Date Materialised |
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Sectors submitted by the Researcher |
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Project URL: |
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Further Information: |
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Organisation Website: |
http://www.cam.ac.uk |