| EPSRC Reference: |
GR/J36112/01 |
| Title: |
SPA-LEED INVESTIGATION OF STRAIN RELIEF AND GROWTH MODE MODIFICATION I N STRAINED SEMICONDUCTOR SYSTEMS. |
| Principal Investigator: |
Macdonald, Professor JE |
| Other Investigators: |
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| Project Partners: |
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| Department: |
School of Physics and Astronomy |
| Organisation: |
Cardiff University |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
10 January 1994 |
Ends: |
09 January 1997 |
Value (£): |
82,425
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
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Summary on Grant Application Form |
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Strain relief in heavily-strained layers is initiated by elastic deformation of islands. Hence, suppression of islanding during growth, achieved by the use of surfactant monolayers leads to a large increase (by a factor of 2-3) in the critical thickness. We propose a study of the effect of a stepped surface on the kinetics of islanding and the resulting effect on the strain distribution both perpendicular and parallel to the steps. If islanding can be reduced, as a result of adatoms nucleating a step edges, this may be a novel alternative to surfactant growth. A related, potentially important, field is surfactant growth of metals on Si, based on recent observation of suppressed islanding in growth of Ag on Ag(111) in the presence of sub-monolayer Sb coverages. A third area of study is relating the structure of buried interfaces after growth with that during the initial stages of growth by comparison with grazing incidence x-ray diffraction results.
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.cf.ac.uk |